Product Summary

The Si4133T-BMR dual-band RF synthesizer is a monolithic integrated circuit that performs both IF and dualband RF synthesis for wireless communications applications. The Si4133T-BMR includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power-down settings are programmable through a three-wire serial interface.

Parametrics

Si4133T-BMR absolute maximum ratings: (1)DC Supply Voltage, VDD: –0.5 to 4.0 V; (2)Input Current, IIN: ±10 mA; (3)Input Voltage, VIN: –0.3 to VDD+0.3 V; (4)Storage Temperature Range, TSTG: –55 to 150 ℃.

Features

Si4133T-BMR features: (1)Dual-Band RF Synthesizers: RF1: 900 MHz to 1.8 GHz; RF2: 750 MHz to 1.5 GHz; (2)IF Synthesizer: IF: 62.5 MHz to 1000 MHz; (3)Integrated VCOs, Loop Filters, Varactors, and Resonators; (4)Minimal External Components Required; (5)Low Phase Noise; (6)Programmable Power Down Modes; (7)1 μA Standby Current; (8)18 mA Typical Supply Current; (9)2.7 V to 3.6 V Operation; (10)Packages: 24-Pin TSSOP, 28-Lead MLP.

Diagrams

Si4133T-BMR Functional Block Diagram

Si4100DY
Si4100DY
Other

Data Sheet
Negotiable 
Si4100DY-T1-E3
Si4100DY-T1-E3
Vishay/Siliconix
MOSFET 100V 6.8A 6.0W
Data Sheet
0-1: $0.76
1-25: $0.60
25-50: $0.57
50-100: $0.54
SI4100DY-T1-GE3
SI4100DY-T1-GE3
Vishay/Siliconix
MOSFET 100V 6.8A 6.0W 63mohm @ 10V
Data Sheet
0-1: $1.03
1-10: $0.73
10-50: $0.68
50-100: $0.64
Si4102DY
Si4102DY
Other

Data Sheet
Negotiable 
SI4102DY-T1-E3
SI4102DY-T1-E3
Vishay/Siliconix
MOSFET 100V 3.8A 4.8W
Data Sheet
0-1250: $0.35
1250-2500: $0.24
2500-5000: $0.23
5000-7500: $0.22
SI4102DY-T1-GE3
SI4102DY-T1-GE3
Vishay/Siliconix
MOSFET 100V 3.8A 4.8W 158mohm @ 10V
Data Sheet
0-1: $0.66
1-10: $0.52
10-50: $0.49
50-100: $0.47