Product Summary

The AO4401 P-Channel Enhancement Mode Field Effect Transistor uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Parametrics

AO4401 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -30V; (2)Gate-Source Voltage, VGS: ±12V; (3)Continuous Drain Current, ID: -6.1A at TA=25℃; -5.1A at TA=70℃ ; (4)Pulsed Drain Current, IDM: -60A; (5)Power Dissipation, PD: 3W at TA=25℃; 2.1W at TA=70℃; (6)Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.

Features

AO4401 features: (1)VDS (V) = -30V; (2)ID = -6.1 A; (3)RDS(ON) < 46mΩ (VGS = -10V); (4)RDS(ON) < 61mΩ (VGS = -4.5V); (5)RDS(ON) < 117mΩ (VGS = -2.5V).

Diagrams

AO4401 circuit diagram

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AO4401
AO4401

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Image Part No Mfg Description Data Sheet Download Pricing
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AO4401
AO4401

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Data Sheet

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AO4402


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Data Sheet

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MOSFET P-CH -30V -6.1A 8-SOIC

Data Sheet

0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
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Data Sheet

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MOSFET N-CH 30V 8.5A 8-SOIC

Data Sheet

0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
AO4405

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Data Sheet

Negotiable